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ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 1 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated low power 6 stage fet lna and mixer bias controller summary the ZABG6002 is a programmable low power depletion mode fet bias and mixer controller intended primarily for satellite low noise blocks (lnbs). designed to provide syst em flexibility the ZABG6002 can be programmed to bias six low noise amplifier (lna) stages or four lna and two ac tive mixer stages, allowing the ZABG6002 to be used in several system designs. combining advanced ic process and packaging techniques, the ZABG6002 operates with minimal current over a wide supply voltage. the small package and reduced com ponent count minimizes the pcb area whilst enhancing overall lnb reliability. features ? six stage fet bias controller, two configurable as mixer stages ? operating range of 3.0v to 8.0v ? amplifier fet drain voltages set at 2.0v, mixer drain voltage set at 0.25v ? amplifier fet drain current selectable from 0 to 15ma, mixer current from 0 to 7.5ma ? switchable fet?s for power management ? fet drain voltages and currents held stable over temperature and v cc variations ? fets protected against overstress during power- up and power-down. ? internal negative supply generator allowing single supply operation (available for external use) ? low quiescent supply current, 1.6ma typical ? low external component count pin assignments qfn2044 qsop20 applications ? twin lnb?s ? quad lnb?s ? us lnb?s ? microwave links ? pmr and cellular telephone systems twin lnb system diagrams zabg 6002 zxhf 5002 horizontal vertical zabg 6002 zxhf 5002 horizontal vertical zabg 6002 2x2 mux zlnb 102 left right zabg 6002 2x2 mux zlnb 102 left right ? g2 g n d d3 g3 cnb1 g 1 d 4 vc c d1 d5 d2 g5 cnb2 c s ub d6 g6 rcal2 rcal1 rcalm g4 g2 g n d d3 g3 cnb1 g 1 d 4 vc c d1 d5 d2 g5 cnb2 c s ub d6 g6 rcal2 rcal1 rcalm g4 g2 g n d d3 g3 cnb1 g 1 d 4 vc c d1 d5 d2 g5 cnb2 c s ub d6 g6 rcal2 rcal1 rcalm g4 csub csub csub g1 d2 g2 d4 d5 rcal2 rcal1 g4 rcalm gnd g3 d3 d6 g5 csub cnb2 g6 cnb1 d1 1 vcc g1 d2 g2 d4 d5 rcal2 rcal1 g4 rcalm gnd g3 d3 d6 g5 csub cnb2 g6 cnb1 d1 1 vcc
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 2 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated device description the zabg series of devices are designed to meet the bias requirements of gaas and hemt fets commonly used in satellite receiver lnbs with a minimum of external co mponents whilst operating from a minimal voltage supply and using minimal current. the ZABG6002 has six fet bias stages that can be user programmed to provide either a two plus four arrangement of amplifier fet stages or a two plus two arra ngement of amplifier fet stages along with two active mixer fet stages. programming of the fet bias stage a rrangement and the operating currents of each fet group is achieved by resistors co nnected to the rcal1, rcal2 and rcalm pi ns, allowing input fets to be biased for optimum noise, amplifier fets for optimum gain and mixer fets (if used) for optimum conversion gain. amplifier fets can be operated at currents in the range 0 to 15ma and mixer fets in the range 0.5 to 7.5ma. drain voltages of amplifier stages are set at 2.0v and mixer stages at 0.3v. the drain supplies are current limited to approximately 5% above the operating currents set by their associat ed rcal resistors. as an additional feature the rcal pins can also be used as logic inputs to disable pairs of fets as part of a power management scheme or simply an alternative to lna switchin g. driven to a logic high (>3.0v), the inputs disable their associated fet bias stages by switching ga te feeds to -2.5v and drain feeds open circuit. depletion mode fets require a negative voltage bias supply when operated in grounded source circuits. the ZABG6002 includes an integrated low noise switched capaci tor dc-dc converter generati ng a regulated output of - 2.5v to allow single supply operation. to aid efficien cy and 3.3v systems the ZABG6002 has been design to used with supply rails of 3.3v to 8v it is possible to use less than the devices full complement of fet bias controls, unused drain and gate connections can be left open circuit without affecting operation of the remaining bias circuits. to protect the external fets the circuits have been desi gned to ensure that, under any conditions including power up/down transients, the gate drive from the bias circuits cannot exceed -3v. additi onally each stage has its own individual current limiter. furthermore if the negative rail ex periences a fault condition, such as overload or short circuit, the drain supply to the fets will shut down avoiding excessive current flow. the ZABG6002 is available in the 20 pin 4mm x 4mm qfn or qsop20 package. device operating temperature is -40c to 85c to suit a wide range of environmental conditions.
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 3 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated maximum ratings parameter rating unit supply voltage -0.6 to +10 v supply current 100 ma power dissipation 600 mw operating temperature range -40 to +85 c storage temperature range -40 to 150 c electrical characteristics measured at t amb = 25c, v cc = 3.3v (note 1), r cal1 = r cal2 = 36k (setting i d1/2/4/5 to 10ma), r calm = 68k (setting i d3/6 to 5ma) unless otherwise stated parameter conditions symbol min. typ. max. unit operating voltage range v cc 3.0 8.0 v supply current i d1-6 = 0 i cc 1.6 4.0 ma i d1-6 = 10ma, no r calm i cc(l) 62 64 ma substrate voltage i csub = 0 v csub -3.0 -2.65 -2.0 v i csub = -200ua v csub(l) -2.55 -2.0 v oscillator frequency f osc 150 260 600 khz gate characteristics gate (g1 to g6, resistor r calm not present) current range i g -100 +500 ua voltage low i d = 12ma, i g = -10ua v g(l) -3.0 -2.5 -2.0 v voltage high i d = 8ma, i g = 0 v g(h) 0 0.7 1.0 v voltage disabled (*1) i d = 0, i g = -10ua, v rcal1-2 = 3.0v v g(dis) -3.0 -2.5 -2.0 v gate (g3 and g6, resistor r calm present) current range i g -100 +500 ua voltage low i d = 6ma, i g = -10ua v g(l) -3.0 -2.5 -2.0 v voltage high i d = 4ma, i g = 0 v g(h) 0 0.7 1.0 v voltage disabled (*1) i d = 0, i g = -10ua, v rcal2 = v rcalm 3.0v v g(dis) -3.0 -2.5 -2.0 v drain characteristics drain (d1 to d6, resistor r cal m not present) current range i d 0 15 ma current operating standard application circuit i d(op) 8 10 12 ma current disabled (*1) v d = 0, v rcal = 3.0v i d(dis) 10 ua voltage operating i d = 10ma v d(op) 1.8 2.0 2.2 v
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 4 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated electrical characteristics (cont.) measured at t amb = 25c, v cc = 3.3v (note 1), r cal1 = r cal2 = 36k (setting i d1/2/4/5 to 10ma), r calm = 68k (setting i d3/6 to 5ma) unless otherwise stated parameter conditions symbol min. typ. max. unit drain characteristics drain (d3 and d6, resistor r cal m present) current range i dm 0.5 7.5 ma current operating standard application circuit i dm(op) 4 5 6 ma current disabled (*1) v d = 0, v rcal = 3.0v, r calm not present i dm(dis) 10 ua voltage operating i d = 5ma v dm(op) 0.25 0.3 0.35 v r cal (1 and 2) disable threshold (*1) v rcal(dis) 1.8 2.7 3.0 v input current v rcal = 3.0v i rcal(dis) 1.7 10 ua r calm disable threshold (*1) r calm(dis) 1.5m 3.3m 5.0m r calm range r calm 39k 390k voltage and temperature dependence (r cal m not present) delta i d vs v cc v cc = 3.3 to 8.0v di d /dv cc 1.2 %/v delta i d vs t op t op = -40c to +85c di d /dt op 0.05 %/c delta v d vs v cc v cc = 3.3 to 8.0v dv d /dv cc 0.05 %/v delta v d vs t op t op = -40c to +85c dv d /dt op 50 ppm/c output noise drain voltage c gate-gnd = 10nf, c drain-gnd = 10nf v d(noise) 0.02 vpk-pk gate voltage c gate-gnd = 10nf, c drain-gnd = 10nf v g(noise) 0.005 vpk-pk notes: 1. to disable fet stages 3 and 6, pin r cal2 must be set to 3v or above and pin r calm should be open circuit. see applications section for further information. 2. the characteristics are measured using up to three external reference resistors, r cal1 , r cal2 and r calm , wired from pins r cal1/2/m to ground. resistor r cal1 sets the drain current of fets 1 and 4. if r calm is not present, resistor r cal2 sets the drain currents of fets 2, 3, 5 and 6. if r calm is present, resistor r cal2 sets the drain currents of fets 2 and 5 and r calm sets the drain currents of fets 3 and 6. 3. the negative bias voltages are generated on-chip usin g an internal oscillator. two external capacitors, c nb and c sub of value 47nf are required for this purpose. 4. the qfn2044 exposed pad must either be c onnected to csub or left open circuit. 5. noise voltage measurements are made with fets and gate and drain capacitors of value 10nf in place. noise voltages are not m easured in production. 6. esd sensitive, handling precautions are recommended.
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 5 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated typical characteristics measured at t amb = 25c, v cc = 3.3v, r cal1 = r cal2 = 36k (setting i d to 10ma), r calm = 68k (setting i d3/6 to 5ma) unless otherwise stated ZABG6002 drain voltage (d1 - d6) vs temperature 1.7 1.8 1.9 2 2.1 2.2 2.3 -40 -20 0 20 40 60 80 temperature (c) drain voltage (v) ZABG6002 drain current (d1 - d6) vs temperature 0 2 4 6 8 10 12 14 16 18 20 - 4 0- 2 00 2 04 06 08 0 temperature (c) drain current (ma) ZABG6002 drain voltage (d3 & d6 only) vs temperature 0 0.1 0.2 0.3 0.4 0.5 -40 -20 0 20 40 60 80 temperature (c) drain voltage (v) ZABG6002 drain current (d3 & d6 only) vs temperature 0 2 4 6 8 10 -40-200 20406080 temperature (c) drain current (ma) ZABG6002 substrate voltage vs substrate current -3 -2.8 -2.6 -2.4 -2.2 -2 0 50 100 150 200 250 substrate current (ua) substrate voltage (v)
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 6 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated typical characteristics (cont.) measured at t amb = 25c, v cc = 3.3v, r cal1 = r cal2 = 36k (setting i d to 10ma), r calm = 68k (setting i d3/6 to 5ma) unless otherwise stated ZABG6002 drain voltage vs drain current (d1-d6) 1.8 1.9 2 2.1 2.2 051015 drain current (ma) drain voltage (v) ZABG6002 drain current vs r cal 0 5 10 15 10 100 1000 r cal (k) drain current (ma) ZABG6002 drain voltage vs drain current (d3 & d6 only) 0 0.1 0.2 0.3 0.4 0.5 051 0 drain current (ma) drain voltage (v) ZABG6002 drain current vs r calm 0 5 10 10 100 1000 r cal (k) drain current (ma)
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 7 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated application information the ZABG6002 is a flexible device and can be set up in a number of ways. 1. 6 lna stages to provide standard bias to the gaas or hemt fet?s 2. 4 lna stages to provide standard bias to the gaas or hemt fet?s plus 2 active mixer stages 3. power down fet groups for lna switching or power saving. the truth table below shows t he function of these features. fet stage r cal pin resistor termination 1st lna stages 2nd lna stages 3rd lna/mixer stages rcal1 rcal2 rcalm bias 1 bias 4 bias 2 bias 5 bias 3 bias 6 gnd gnd open on on on on on on gnd gnd gnd on on on on mixer mixer gnd 3v open on on off off off off gnd 3v gnd on on off off mixer mixer 3v gnd open off off on on on on 3v gnd gnd off off on on mixer mixer 3v 3v open off off off off off off 3v 3v gnd off off off off mixer mixer ZABG6002 in 6 lna mode below is a partial applications circuit for the ZABG6002 showing all external components needed for biasing one of the six fet stages available as a normal lna bias. each bias stage is provided with a gate and drain pin. the drain pin provides a regulated 2.0v supply that includes a drain current monitor. the drain cu rrent taken by the external fet is compared with a user selected level, generating a si gnal that adjusts the gate voltage of the fet to obtain the required drain current. if for any reason, an attempt is made to draw more than the user set drain current from the drain pin, the drain voltage will be reduced to ensure exce ss current is not taken. the gate pin drivers are also current limited. the bias stages are split up into two groups, with the drain current of each group set by an external r cal resistor. r cal 1 sets the drain currents of stages 1 and 4, whilst r cal 2 sets the drain current s of stages 2,3,5 and 6. ? jf2 vcc l* l* c* c* c1 10nf c2 10nf cnb 47nf csub 47nf rcal2 * stripline elements rcal1 36k g2 gnd d3 g3 cnb 1 g1 d4 vcc d1 d5 d2 g5 c nb2 csub d6 g6 rcal2 rcal1 rcalm g4 ZABG6002 jf2 vcc l* l* c* c* c1 10nf c2 10nf cnb 47nf cnb 47nf csub 47nf rcal2 * stripline elements rcal1 g2 gnd d3 cnb 1 g1 d4 vcc d1 d5 d2 g5 c nb2 csub d6 g6 rcal2 rcal1 rcalm g4 ZABG6002 36k
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 8 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated this allows the optimization of drain currents for differing ta sks such as input stages where noise can be critical and later amplifier stages where gain may be more important. a graph showing the relationship between the value of r cal and i d is provided in the typical characte ristics section of this datasheet. to ensure that the mixer function is disabled the r cal m pin should be left open circuit. ZABG6002 in 4 lna and 2 active mixer mode below is a partial applications circuit for the ZABG6002 showing all external components needed for biasing one of the four fet stages available for lna bias and one of the two mixer bias stages. each lna bias stage is provided with a gate and drain pin. the drain pin provides a regulated 2.0v su pply that includes a drain current monitor. each mixer bias stage is provided with a gate and drain pin. the drain pin provides a regulated 0.3v supply that includes a drain current monitor but optimized to the requirements of an active mixer. the drain current taken by the external fet (lna and mixer) is compared with a user selected level, generating a signal that adj usts the gate voltage of the fet to obtain the required drain current. if for any reason, an attempt is made to draw more than the user set drain current from the drain pin, the drain voltage will be reduced to ensure excess current is not taken. the gate pin drivers are also current limited. jf 2 vcc l* l* c* c* c1 10nf c2 10nf cn b 47nf csu b 47nf rc al2 36k * stripline elements rc al1 36k g2 gnd d3 g3 cnb1 g1 d4 vcc d1 d5 d2 g5 cnb2 csub d6 g6 rcal2 rcal1 rcalm g4 zab g60 02 rc alm 68k jf m l* l* c* c* c3 10nf c4 10nf vlo the bias stages are split up into three groups, with the drain current of each group set by an external r cal resistor. r cal 1 sets the lna drain currents of stages 1 and 4 and r cal 2 sets the drain currents of lna stages 2 and 5. r calm sets the mixer drain currents of stages 3 and 6. this allows the optimization of drain currents for differing tasks such as input stages where noise can be critical and later amp lifier stages where gain may be more important. a graph showing the relationship between the value of r cal and i d is provided in the typical ch aracteristics section of this datasheet.
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 9 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated general operation in both modes the r cal 1 and r cal 2 pins can also be used as logic inputs . if set to a logic high state (>3.0v), the associated fet bias stages programmed for lna use (2v dr ains) are disabled by driving gate pins to -2,5v and switching drain pins open-circuit. this feature can be us ed as part of a power managem ent system that turns off any unwanted stages in a multi input receiver. the ZABG6002 includes a switched capacitor dc-dc c onverter that is used to generate the negative supply required to bias depletion mode fets used in common source circuit configuration as shown above. this converter uses two external capacitors, c nb the charge transfer capacitor and c sub the output reservoir capacitor. the circuit provides a regulated -2.5v supply both for gate driver use and for external use if required (for extra discrete bias stages, mixer bias, local oscillator bias etc. ). the -2.5v supply is available from the c sub pin. if any bias stages are not required, their gate and drain pi ns may be left open circuit. if all bias stages associated with an r cal resistor are not required, then this resistor may be omitted. it must be noted that the exposed pad of the qfn package must be either left floating or connected to csub. ordering information device package reel size (inches) tape width (mm) quantity per reel ZABG6002jb20tc qfn2044 13 12 3,000 ZABG6002q20tc qsop20 13 16 2,500 marking information ? part name pin 1 ZABG6002 yyww date code zabg 6002 yyww pin 1 part name date code year/week qfn2044 qsop20
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 10 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated package outline dimensions qsop20 dim millimeters inches min max min max a 1.35 1.75 0.053 0.069 a1 0.10 0.25 0.004 0.010 a2 1.25 1.50 0.049 0.059 d 8.56 8.74 0.337 0.344 zd 0.058 ref 1.47 ref b 0.20 0.30 0.008 0.012 c 0.18 0.25 0.007 0.010 e 0.64 bsc 0.025 bsc e 5.79 6.20 0.228 0.244 e1 3.81 3.99 0.150 0.157 l 0.41 1.27 0.016 0.050 0 8 0 8 h 0.25 0.50 0.010 0.020
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 11 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated package outline dimensions (cont.) qfn2044 dim min. max. typ. d 3.95 4.05 4.00 e 3.95 4.05 4.00 d2 2.40 2.60 2.50 e2 2.40 2.60 2.50 a 0.57 0.63 0.60 a1 0 0.05 0.02 a3 ? ? 0.15 b 0.20 0.30 0.25 l 0.35 0.45 0.40 e ? ? 0.50 z ? ? 0.875 aaa 0.25 bbb 0.10 ccc 0.10
ZABG6002 ZABG6002 document number: ds32078 rev. 1 - 2 12 of 12 www.diodes.com may 2010 ? diodes incorporated a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to re sult in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2010, diodes incorporated www.diodes.com

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